| PART |
Description |
Maker |
| M29F800DB M29F800DB55M1E M29F800DB55M1F M29F800DB5 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29F800AB M29F800AB70N1T M29F800AB90N1T M29F800AB7 |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| M29W800AB M29W800AB120ZA5T M29W800AT80ZA5T M29W800 |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Low-Power Single Buffer/Driver with 3-State Output 5-DSBGA -40 to 85 8兆x812KB的x16插槽，引导块低压单电源闪
RESISTOR: 100 OHM, 1/10W, 1%, PACKAGE 0805 81兆x812KB的x16插槽，引导块低压单电源闪
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory 8兆x812KB的x16插槽，引导块低压单电源闪
Low-Power Single Buffer/Driver with 3-State Output 5-SOT-23 -40 to 85
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
| M27C800-100B1TR M27C800-100B6TR M27C800-100F1TR M2 |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
64K (8K x 8) UV EPROM and OTP ROM
|
意法半导
STMicroelectronics
ST Microelectronics
|
| M27W016-100B1T M27W016-100M1T M27W016-100N1T M27W0 |
16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory
|
STMicroelectronics
意法半导
ST Microelectronics
|
| M27C800 M27C800-120F1TR M27C800-120F6TR 27C800 M27 |
512K X 16 OTPROM, 120 ns, PDSO44
512K X 16 OTPROM, 50 ns, PQCC44
Octal Bus Transceiver With 3-State Outputs 20-TSSOP -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储
Octal Bus Transceiver With 3-State Outputs 20-TVSOP -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM 8兆x812KB的x16紫外线存储器和OTP存储
Octal Bus Transceiver With 3-State Outputs 20-SOIC -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储
16-Bit Bus Transceiver and Transparent D-Type Latch with 8 Independent Buffers 96-LFBGA -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储
32-Bit Buffer/Driver With 3-State Outputs 96-LFBGA -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储
Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85
Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85
8 MBIT (1MB X8 OR 512KB X16) UV EPROM AND OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位（含2Mb x8兆x16插槽，引导块3V电源快闪记忆
CAP 3300UF 6.3V ELECT FC RADIAL 16兆位（含2Mb x8兆x16插槽，引导块V电源快闪记忆
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| M29W800B |
8Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(8Mb低压闪速存储器)
|
意法半导
|
| M28W160B-GBT M28W160BB M28W160BTB100GB1T M28W160BT |
16 Mbit 1Mb x16/ Boot Block Low Voltage Flash Memory
16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory 16兆x16插槽，低电压启动座快闪记忆体
|
STMicroelectronics N.V.
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
